Vishay semiconductors, Preliminary, Mechanical specifications – C&H Technology VS-GT250TX120U User Manual
Page 4: Thermal resistance
Preliminary
VS-GT250TX120U
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Vishay Semiconductors
Revision: 08-Jul-13
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Document Number: 93618
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Fig. 1 - Typical Output Characteristics at V
GE
= 15 V
Fig. 2 - Typical Output Characteristics at T
J
= 125 °C
Fig. 3 - Maximum DC IGBT Collector Current
vs. Case Temperature
Fig. 4 - Typical IGBT Collector to Emitter Voltage
vs. JunctionTemperature, V
GE
= 15 V
MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Mounting torque
X-MAP to heatsink
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
Lubricated threads.
4 to 6
Nm
Busbar to X-MAP
Typical weight
320
g
THERMAL RESISTANCE
PARAMETER
SYMBOL
TYP.
MAX.
UNITS
Junction to case
IGBT
R
thJC
-
0.12
°C/W
HEXFRED
-
0.14
Case to sink per module
R
thCS
0.015
-
0
50
100
150
200
250
300
350
400
450
500
0
0.5 1
1.5 2
2.5 3
3.5 4
4.5 5
5.5
I
C
(A)
V
CE
(V)
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
T
J
= 175 °C
0
50
100
150
200
250
300
350
400
450
500
0.2 0.7 1.2 1.7 2.2 2.7 3.2 3.7 4.2 4.7 5.2
I
C
(A)
V
CE
(V)
V
GE
= 9 V
V
GE
= 12 V
V
GE
= 15 V
V
GE
= 18 V
I
C
-
Continuous Collector Current (A)
Allowable Case Temperature (°C)
0
20
40
60
80
100
120
140
160
180
0
50
100
150
200
250
300
350
400
DC
V
CE
(V)
T
J
(°C)
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
20
40
60
80
100
120
140
160
180
250 A
150 A
80 A