Vishay semiconductors, Thermal and mechanical specifications – C&H Technology VS-GA200TH60S User Manual
Page 4
VS-GA200TH60S
www.vishay.com
Vishay Semiconductors
Revision: 17-Sep-12
3
Document Number: 94762
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Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Transfer Characteristics
Fig. 3 - Switching Loss vs. Collector Current
Fig. 4 - Switching Loss vs. Gate Resistor
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Operating junction temperature range
T
J
- 40
-
150
°C
Storage temperature range
T
STG
- 40
-
125
Junction to case
IGBT
R
thJC
-
-
0.12
K/W
Diode
-
-
0.27
Case to sink
R
thCS
Conductive grease applied
-
0.03
-
Mounting torque
Power terminal screw: M6
2.5 to 5.0
Nm
Mounting screw: M6
3.0 to 6.0
Weight
325
g
I
C
(A)
V
CE
(V)
0
50
100
150
200
250
300
350
400
0
1
2
3
4
V
GE
= 15 V
25 °C
125 °C
4
6
8
10
0
100
150
50
200
250
300
350
400
I
C
(A)
V
GE
(V)
V
CE
= 20 V
25 °C
125 °C
0
2
4
6
8
10
12
14
16
18
20
0
100
300
400
200
I
C
(A)
E
on
E
off
E
on
, E
of
f
(mJ)
V
GE
= ± 15 V
T
J
=
125 °C
R
g
= 4.7
Ω
V
CC
= 300 V
0
5
15
10
20
25
30
0
20
10
5
15
25
30
R
g
(
Ω)
E
on
, E
of
f
(mJ)
V
GE
= ± 15 V
T
J
=
125 °C
I
C
= 200 A
V
CC
= 300 V
E
on
E
off