C&H Technology GB50YF120N - Manual (Page 6)

Document Number: 93653 For technical questions, contact: [email protected] www.vishay.com
Revision: 29-May-08 5
GB50YF120N
IGBT Fourpack Module, 50 A Vishay High Power Products
Fig. 11 - Typical Zero Gate Voltage Collector Current
Fig. 12 - Typical Threshold Voltage
Fig. 13 - Typical Energy Loss vs. I
C
T
J
= 125 °C; L = 200 µH; V
CE
= 600 V, R
G
= 5
Ω; V
GE
= 15 V
Fig. 14 - Typical Switching Time vs. I
C
T
J
= 125 °C; L = 200 µH; V
CE
= 600 V, R
G
= 5 Ω; V
GE
= 15 V
Fig. 15 - Typical Diode I
REC
vs. dI
F
/dt
V
CC
= 600 V; I
F
= 50 A
Fig. 16 - Typical Diode t
rr
vs. dI
F
/dt
V
CC
= 600 V; I
F
= 50 A
400 600 800 1000 1200
0.001
0.01
0.1
1
TJ = 125°C
TJ = 25°C
V
CES
(V)
I CES
(mA)
0 0.2 0.4 0.6 0.8 1
2
2.5
3
3.5
4
4.5
5
5.5
TJ = 125°C
TJ = 25°C
I C (mA)
V
geth
(V)
0 20 40 60 80 100
0.5
1
1.5
2
2.5
3
3.5
4
4.5
EON
EOFF
I C (A)
Energy (mJ)
0 20 40 60 80 100
0.01
0.1
1
tR
tdOFF
tF tdON
I
C
(A)
Switching Time (µs)
0 20 40 60 80 100
0
2
4
6
8
10
12
125°C
25°C
dI F/ dt (A/µs)
I RR
(A)
0 20 40 60 80 100
0
100
200
300
400
500
600
700
800
125°C
25°C
dI F/ dt (A/µs)
t RR
(ns)