C&H Technology GB50YF120N - Manual (Page 4)

Document Number: 93653 For technical questions, contact: [email protected] www.vishay.com
Revision: 29-May-08 3
GB50YF120N
IGBT Fourpack Module, 50 A Vishay High Power Products
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case Temperature
Fig. 3 - Forward SOA
T
C
= 25 °C; T
J
≤ 150 °C
Fig. 4 - Reverse Bias SOA
T
J
= 150 °C; V
GE
= 15 V
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Junction to case IGBT R
thJC
(IGBT) - - 0.38
°C/W Junction to case DIODE R
thJC
(DIODE) - - 1.00
Case to sink, flat, greased surface R
thCS
(MODULE) - 0.05 -
Mounting torque (M5) 2.7 - 3.3 Nm
Weight - 170 - g
0 10 20 30 40 50 60 70
0
20
40
60
80
100
120
140
160
T C (°C)
I C
(A)
0 20 40 60 80 100 120 140 160
0
50
100
150
200
250
300
350
T C (°C)
P
D
(W)
1 10 100 1000 10000
0.01
0.1
1
10
100
1000
V CE (V)
IC (A)
10 100 1000 10000
1
10
100
1000
T C (°C)
P
D
(W)