C&H Technology VS-GT450TX120U - Manual (Page 4)

Preliminary
VS-GT450TX120U
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Vishay Semiconductors
Revision: 23-Jul-13 3 Document Number: 93615
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Fig. 1 - Typical Output Characteristics at V
GE
= 15 V
Fig. 2 - Typical Output Characteristics at T
J
= 125 °C
Fig. 3 - Maximum DC IGBT Collector Current
vs. Case Temperature
Fig. 4 - Typical IGBT Collector to Emitter Voltage
vs. JunctionTemperature, V
GE
= 15 V
MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Mounting torque
X-MAP to heatsink
A mounting compound is recommended and the
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound.

Lubricated threads.
4 to 6 Nm
Busbar to X-MAP
Typical weight 320 g
THERMAL RESISTANCE
PARAMETER SYMBOL TYP. MAX. UNITS
Junction to case
IGBT
R
thJC
- 0.06
°C/W HEXFRED - 0.12
Case to sink per module R
thCS
0.015 -
V
CE
(V)
I C
(A)
700
800
900
400
500
600
700
100
200
300
400
0
100
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
T
J
= 150 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 175 °C
V
CE
(V)
I C
(A)
6
700
800
900
300
400
500
600
0
100
200
300
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
V
GE
= 9 V
V
GE
= 12 V
V
GE
= 15 V
V
GE
= 18 V
I
C
- Continuous Collector Current (A)
Allowable Case Temperature (°C)
120
140
160
180
40
60
80
100
120
DC
0
20
40
0 100 200 300 400 500 600 700
V
CE
(V)
T
J
(°C)
2.2
2.4
2.6
2.8
3
3.2
1.2
1.4
1.6
1.8
2
2.2
2.
20 40 60 80 100 120 140 160 180
450 A
300 A
150 A