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Vishay semiconductors, Preliminary, Electrical specifications (t – C&H Technology VS-GT450TX120U User Manual

Page 3: 25 °c unless otherwise specified), Internal ntc - thermistor specifications

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Preliminary

VS-GT450TX120U

www.vishay.com

Vishay Semiconductors

Revision: 23-Jul-13

2

Document Number: 93615

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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ELECTRICAL SPECIFICATIONS (T

J

= 25 °C unless otherwise specified)

PARAMETER SYMBOL

TEST

CONDITIONS

MIN.

TYP.

MAX.

UNITS

Collector to emitter breakdown voltage

V

BR(CES)

V

GE

= 0 V, I

C

= 500 μA

1200

-

-

V

Breakdown voltage

temperature coefficient

V

(BR)CES

/

T

J

Reference to 25 °C, I

C

= 1 mA

-

n/a

-

V/°C

Collector to emitter voltage

V

CE(on)

V

GE

= 15 V, I

C

= 450 A

-

2.49

-

V

V

GE

= 15 V, I

C

= 450 A, T

J

= 125 °C

-

2.84

-

Gate threshold voltage

V

GE(th)

V

CE

= V

GE

, I

C

= 1.0 mA

-

4.9

-

V

Forward transconductance

g

fe

V

CE

= 20 V, I

C

= 450 A

-

525

-

S

Collector to emitter leakage current

I

CES

V

GE

= 0 V, V

CE

= 1200 V

-

0.07

-

mA

V

GE

= 0 V, V

CE

= 1200 V, T

J

= 125 °C

-

4

-

Gate to emitter leakage current

I

GES

V

GE

= ± 30 V

-

-

± 400

nA

Total gate charge (turn-on)

Q

g

I

C

= 450 A

V

CE

= 600 V

V

GE

= 15 V

-

2490

-

nC

Gate to emitter charge (turn-on)

Q

ge

-

540

-

Gate to collector charge (turn-on)

Q

gc

-

1140

-

Turn-on switching loss

E

on

I

C

= 450 A, V

CC

= 600 V, V

GE

= 15 V,

R

g

= 3.3

, L = 500 μH, T

J

= 25 °C

-

51.8

-

mJ

Turn-off switching loss

E

off

-

33.0

-

Turn-on switching loss

E

on

V

CC

= 600 V, T

J

= 125 °C

I

C

= 450 A

R

g

= 3.3

, L = 500 μH

V

GS

= 15 V

-

62.4

-

Turn-off switching loss

E

off

-

50

-

Turn-on delay time

t

d(on)

-

830

-

ns

Rise time

t

r

-

249

-

Turn-off delay time

t

d(off)

-

862

-

Fall time

t

f

-

134

-

Input capacitance

C

iss

V

GE

= 0 V

V

CE

= 30 V

f = 1.0 MHz

-

53.7

-

nF

Output capacitance

C

oss

-

2

-

Reverse transfer capacitance

C

rss

-

1.5

-

Forward voltage

V

F

I

F

= 450 A

-

2.68

-

V

I

F

= 450 A, T

J

= 125 °C

-

3.0

-

Reverse recovery time

t

rr

I

F

= 450 A, L = 500 μH, R

g

= 3.3

, 

V

R

= 600 V

-

370

-

ns

I

F

= 450 A, L = 500 μH, R

g

= 3.3

, 

V

R

= 600 V, T

J

= 125 °C

-

511

-

Reverse recovery charge

Q

rr

I

F

= 450 A, L = 500 μH, R

g

= 3.3

, 

V

R

= 600 V

-

15.8

-

μC

I

F

= 450 A, L = 500 μH, R

g

= 3.3

,

V

R

= 600 V, T

J

= 125 °C

-

39.8

-

Junction capacitance

C

T

V

R

= 1200 V

-

n/a

-

pF

INTERNAL NTC - THERMISTOR SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

TYP.

UNITS

Resistance

R

25

T

J

= 25 °C

5000 ± 5 %

Resistance

R

125

T

J

= 125 °C

493 ± 5 %

B-constant

B

R

2

= R

1

e

[B(1/T2 - 1/T1)]

3.375 ± 5 %

K

Temperature range

- 40 to 125

°C

Maximum operating temperature

220

Dissipation constant

2

mW/°C

Thermal time constant

8

s