Phase control scr, Thermal characteristics, Electrical characteristics, t – C&H Technology TAK7--12 User Manual
Page 4: 25°c unless otherwise specified

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
Phase Control SCR
www.pwrx.com
1200 Amperes Average
4400 Volts
Revision Date: 03/26/2010
TAK7
1200A
®
Thermal Characteristics
Maximum Thermal Resistance, Double Sided Cooling
Max.
Units
Junction-to-Case
Case-to-Sink
R
Θ(J-C)
R
Θ(C-S)
0.015
0.007
°C/W
°C/W
Electrical Characteristics, T
J
=25°C unless otherwise specified
Characteristics Symbol
Test
Conditions
Min.
Typ. Max.
Units
Repetitive Peak Reverse Leakage Current
I
RRM
T
J
=125°C, V
R
= V
RRM
250
mA
Repetitive Peak Forward Leakage Current
I
DRM
T
J
=125°C, V
D
= V
DRM
250
mA
Peak On-State Voltage
V
TM
T
J
=25°C, I
TM
=1500A peak,
Duty Cycle < 0.1 %
1.90 V
Threshold Voltage, Low-level
Slope Resistance, Low-level
V
(TO)1
r
T1
T
J
= 125°C, ITM = 250A to 4000A
1.262
0.397
V
mΩ
Threshold Voltage, High-level
Slope Resistance, High-level
V
(TO)2
r
T2
T
J
= 125°C, I
TM
≥ 4000A
1.412
0.368
V
mΩ
V
TM
Coefficients
T
J
= 125°C
V
TM
= A+ B Ln(I) +C(I) + D Sqrt(I)
A =
B =
C =
D =
2.53
-0.294
2.47 E-04
0.0284
Typical Delay Time
t
d
I
TM
= 1000A, V
D
= 1500 V
4 µ
s
Typical Turn-Off Time
t
q
T
j
= 125°C, I
T
= 250A,
di
R
/dt = 50A/µs Reapplied
dv/dt = 20 V/µs Linear to 80% V
DRM
500
µ
s
Minimum Critical dv/dt – Exponential to V
DRM
dv/dt
T
J
= 125°C
1000
V/µ
s
Gate Trigger Current
I
GT
T
J
= 25°C, V
D
= 12 V
300 mA
Gate Trigger Voltage
V
GT
T
J
= 25°C, V
D
= 12 V
5.0 V
Non-Triggering Gate Voltage
V
GDM
T
J
= 125°C, V
D
= V
DRM
0.45 V
Peak Forward Gate Current
I
GTM
4 A
Peak Reverse Gate Voltage
V
GRM
5 V