C&H Technology GB75SA120UP - Manual (Page 5)

GB75SA120UP
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Vishay Semiconductors
Revision: 06-Oct-11 4 Document Number: 93124
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Fig. 7 - Typical IGBT Energy Loss vs. I
C
T
J
= 125 °C, L = 500 μH, V
CC
= 600 V,
R
g
= 5 , V
GE
= 15 V
Fig. 8 - Typical IGBT Switching Time vs. I
C
T
J
= 125 °C, L = 500 μH, V
CC
= 600 V,
R
g
= 5 , V
GE
= 15 V
Fig. 9 - Typical IGBT Energy Loss vs. R
g
T
J
= 125 °C, I
C
= 75 A, L = 500 μH,
V
CC
= 600 V, V
GE
= 15 V
Fig. 10 - Typical IGBT Switching Time vs. R
g
T
J
= 125 °C, L = 500 μH, V
CC
= 600 V,
R
g
= 5 , V
GE
= 15 V
Fig. 11 - Maximum Thermal Impedance Z
thJC
Characteristics
Energy (mJ)
I
C
(A)
10 20 30 50 60 70 40 80
0
4.0
1.5
3.0
2.5
2.0
3.5
1.0
0.5
E
on
E
off
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S
witching Time (μs)
I
C
(A)
0 20 60 40 80
10
1000
100
t
d(off)
t
d(on)
t
f
t
r
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Energy (mJ)
R
G
( Ω)
0 10 20 30 40 50
0
14
6
10
8
12
4
2
E
on
E
off
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S
witching Time (μs)
R
G
( Ω)
0 20 30 10 40 50
10
10 000
1000
100
t
d(on)
t
d(off)
t
f
t
r
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0.0001
0.01
0.1
0.001
1
0.00001 0.0001 0.001 0.01 0.1
Rectangular Pulse Duration (t
1
)
Z
thJC
- Thermal Impe
d
ance
Junction to Case (°C/W)
1
Single pulse
(thermal response)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
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