Vishay semiconductors – C&H Technology GB75SA120UP User Manual
Page 2
GB75SA120UP
www.vishay.com
Vishay Semiconductors
Revision: 06-Oct-11
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Document Number: 93124
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Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 75 A
FEATURES
• NPT Generation V IGBT technology
• Square RBSOA
• Positive V
CE(on)
temperature coefficient
• Fully isolated package
• Speed 8 kHz to 60 kHz
• Very low internal inductance (
5 nH typical)
• Industry standard outline
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
PRODUCT SUMMARY
V
CES
1200 V
I
C
DC
75 A at 95 °C
V
CE(on)
typical at 75 A, 25 °C
3.3 V
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
TEST
CONDITIONS
MAX.
UNITS
Collector to emitter voltage
V
CES
1200
V
Continuous collector current
I
C
T
C
= 25 °C
131
A
T
C
= 80 °C
89
Pulsed collector current
I
CM
200
Clamped inductive load current
I
LM
200
Gate to emitter voltage
V
GE
± 20
V
Power dissipation
P
D
T
C
= 25 °C
658
W
T
C
= 80 °C
369
Isolation voltage
V
ISOL
Any terminal to case, t = 1 min
2500
V
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Collector to emitter breakdown voltage
V
BR(CES)
V
GE
= 0 V, I
C
= 250 μA
1200
-
-
V
Collector to emitter voltage
V
CE(on)
V
GE
= 15 V, I
C
= 75 A
-
3.3
3.8
V
GE
= 15 V, I
C
= 75 A, T
J
= 125 °C
-
3.6
3.9
Gate threshold voltage
V
GE(th)
V
CE
= V
GE
, I
C
= 250 μA
4
5
6
Temperature coefficient of
threshold voltage
V
GE(th)
/
T
J
V
CE
= V
GE
, I
C
= 1 mA (25 °C to 125 °C)
-
- 12
-
mV/°C
Collector to emitter leakage current
I
CES
V
GE
= 0 V, V
CE
= 1200 V
-
3
250
μA
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 150 °C
-
4
20
mA
Gate to emitter leakage current
I
GES
V
GE
= ± 20 V
-
-
± 200
nA