C&H Technology ST083SPbF Series - Manual (Page 8)

Document Number: 94334 For technical questions, contact: [email protected] www.vishay.com
Revision: 29-Apr-08 7
ST083SPbF Series
Inverter Grade Thyristors
(Stud Version), 85 A
Vishay High Power Products
Fig. 13 - Frequency Characteristics
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
Fig. 15 - Gate Characteristics
10
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
400
2500
3000
100
1000
1500
2000
200 500
50 Hz
ST083S Series
Trapezoidal pulse
T
C
= 60 °C
dI/dt = 100 A/µs
t
p
Snubber circuit
R
s
= 22 Ω
C
s
= 0.15 µF
V
D
= 80 % V
DRM
10
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
400
2500
100
1000
1500
2000
200
500
50 Hz
Snubber circuit
R
s
= 22 Ω
C
s
= 0.15 µF
V
D
= 80 % V
DRM
ST083S Series
Trapezoidal pulse
T
C
= 85 °C
dI/dt = 100 A/µs
t
p
Pulse Basewidth (µs)
20 joules per pulse
1
0.5
0.3
0.2
10 5
Peak On-State Current (A)
10 100 1000 10 000
10
100
1000
10 000
t
p
ST083S Series
Sinusoidal pulse
0.1
3 2
Pulse Basewidth (µs)
20 joules
per pulse
0.1
t
p
10 100 1000 10 000
0.2
0.3
0.5
1
2
4
7.5
Peak On-State Current (A)
10
100
1000
10 000
ST083S Series
Rectangular pulse
dI/dt = 50 A/µs
0.1
1
10
100
0.001
V
GD
I
GD
(b)
(a)
T
J = 25 °C
T
J = 125 °C
T
J = 40 °C
(1) (2)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
(3)
Device: ST083S Series
(4)
Frequency limited by P
G(AV)
0.01 0.1 1 10 100
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10
Ω; t
r
≤ 1 µs
b) Recommended load line for
≤
30 % rated dI/dt: 10 V, 10 Ω
t
r
≤
1 µs
(1) P
GM
= 10 W, t
p
= 20 ms
(2) P
GM
= 20 W, t
p
= 10 ms
(3) P
GM
= 40 W, t
p
= 5 ms
(4) P
GM
= 60 W, t
p
= 3.3 ms