Mitsubishi hvigbt modules, High power switching use insulated type – C&H Technology CM800E2C-66H User Manual
Page 3
Mar. 2003
MITSUBISHI HVIGBT MODULES
CM800E2C-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
MAXIMUM RATINGS
(Tj = 25
°
C)
V
GE
= 0V
V
CE
= 0V
DC, T
C
= 95
°
C
Pulse
(Note 1)
Pulse
(Note 1)
T
C
= 25
°
C, IGBT part
—
—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
3300
±
20
800
1600
800
1600
9600
–40 ~ +150
–40 ~ +125
6000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
1.5
V
V
A
A
A
A
W
°
C
°
C
V
N·m
N·m
N·m
kg
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Mass
Collector current
Emitter current
Symbol
Item
Conditions
Unit
Ratings
V
V
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25
°
C
T
j
= 125
°
C
V
CC
= 1650V, I
C
= 800A, V
GE
= 15V
V
CC
= 1650V, I
C
= 800A
V
GE1
= V
GE2
= 15V
R
G
= 2.5
Ω
Resistive load switching operation
I
E
= 800A, V
GE
= 0V
I
E
= 800A
die / dt = –1600A /
µ
s
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied (Per 2/3 module)
I
F
= 800A, Clamp diode part
I
F
= 800A
di
f
/ dt = –1600A /
µ
s, Clamp diode part
Junction to case, Clamp diode part
Case to fin, conductive grease applied (Per 1/3 module)
I
C
= 80mA, V
CE
= 10V
I
C
= 800A, V
GE
= 15V (Note 4)
V
CE
= 10V
V
GE
= 0V
10
0.5
4.94
—
—
—
—
—
1.60
2.00
2.50
1.00
3.64
1.40
—
0.013
0.025
—
3.90
1.40
—
0.025
—
mA
µ
A
nF
nF
nF
µ
C
µ
s
µ
s
µ
s
µ
s
V
µ
s
µ
C
K/W
K/W
K/W
V
µ
s
µ
C
K/W
K/W
—
—
3.80
4.00
120
12.0
3.6
5.7
—
—
—
—
2.80
—
270
—
—
0.008
3.00
—
270
—
0.008
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.0
4.5
7.5
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Contact thermal resistance
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
Min
Typ
Max
I
CES
I
GES
C
ies
C
oes
C
res
Q
G
t
d (on)
t
r
t
d (off)
t
f
V
EC (Note 2)
t
rr
(Note 2)
Q
rr (Note 2)
R
th(j-c)Q
R
th(j-c)R
R
th(c-f)
V
FM
t
rr
Q
rr
R
th(j-c)
R
th(c-f)
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C)
Symbol
Item
Conditions
V
GE(th)
V
CE(sat)
Limits
Unit
Thermal resistance
V
CES
V
GES
I
C
I
CM
I
E
(Note 2)
I
EM (Note 2)
P
C (Note 3)
T
j
T
stg
V
iso
—
—
Note 1. Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
2. I
E
, V
EC
, t
rr
, Q
rr
& die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (T
j
) should not increase beyond 150
°
C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules