C&H Technology CM800E2C-66H - Manual (Page 2)

Mar. 2003
MITSUBISHI HVIGBT MODULES
CM800E2C-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
● I C ................................................................... 800A
● V CES ....................................................... 3300V
● Insulated Type
● 1-elements in a pack (for brake)
● AISiC base plate
APPLICATION
DC choppers, Dynamic braking choppers.
CM800E2C-66H
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CIRCUIT DIAGRAM
A
K
(E)
(C)
E E
C C
E
G
C
LABEL
C
E G
C
E CM E E
C C
29.5
5
13
61.5 61.5
140
124
± 0.25
40
79.4
20.25
57 ± 0.25
171
190
5.2
40
15
41.25
57 ± 0.25 57 ± 0.25
28
20
3 - M4 NUTS
8 - φ 7MOUNTING HOLES
6 - M8 NUTS
38