C&H Technology CPV363M4UPbF - Manual (Page 9)

www.vishay.com For technical questions, contact: [email protected] Document Number: 94486
8 Revision: 01-Sep-08
CPV363M4UPbF
Vishay High Power Products IGBT SIP Module
(Ultrafast IGBT)
Fig. 18a - Test Circuit for Measurements of I
LM
, E
on
, E
off(diode)
, t
rr
, Q
rr
,
I
rr
, t
d(on)
, t
r
, t
d(off)
, t
f
Fig. 18b - Test Waveforms for Circuit of Fig. 18a,
Defining E
off
, t
d(off)
, t
f
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining E
on
, t
d(on)
, t
r
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining E
rec
, t
rr
, Q
rr
, I
rr
Fig. 18e - Macro Waveforms for Figure 18a’s Test Circuit
Same type
device as
D.U.T.
D.U.T.
430 µF 80 %
of V
CE
t1
Ic
Vce
t1 t2
90% Ic
10% Vce
td(off) tf
Ic
5% Ic
t1+5µS
Vce ic dt
90% Vge
+Vge
∫
Eoff =
∫
Vce ie dt
t2
t1
5% Vce
Ic
Ipk Vcc
10% Ic
Vce
t1 t2
DUT VOLTAGE
AND CURRENT
GATE VOLTAGE D.U.T.
+Vg
10% +Vg
90% Ic
tr td(on)
Eon =
DIODE REVERSE
RECOVERY ENERGY
tx
∫
Erec =
t4
t3
Vd id dt
t4 t3
DIODE RECOVERY
WAVEFORMS
Ic
Vpk
10% Vcc
Irr
10% Irr
Vcc
trr
∫
Qrr =
trr
tx
id dt
Vg GATE SIGNAL
DEVICE UNDER TES
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0 t1 t2