C&H Technology CPV363M4UPbF - Manual (Page 6)

Document Number: 94486 For technical questions, contact: [email protected] www.vishay.com
Revision: 01-Sep-08 5
CPV363M4UPbF
IGBT SIP Module
(Ultrafast IGBT)
Vishay High Power Products
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Rectangular Pulse Duration (sec) 1
th
J
C
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
T
h
e
rm
a
l R
e
spo
n
se (Z
)
P
t
2
1
t
DM
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJC C
0
400
800
1200
1600
2000
0 0 1 0 1 1
CE
C,
C
a
p
a
c
it
a
n
c
e
(
p
F
)
V , Collector-to-Emitter Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GE
ies ge gc ce
res gc
oes ce gc
C ies
C res
C oes
0 10 20 30 40 50 60
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V ,
Ga
te
-t
o
-Em
it
te
r Vo
lt
a
g
e
(
V
)
G
GE
V = 400V
I = 6.8A
CC
C
0 12 24 36 48 60
0.30
0.32
0.34
0.36
0.38
0.40
R , Gate Resistance ( )
Tot
al
S
w
it
chi
n
g Losses (m
J)
G
V = 480V
V = 15V
T = 25 C
I = 6.8A
CC
GE
J
C °
Ω
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.1
1
10
T , Junction Temperature ( C )
Total
Swi
tchi
n
g Losses (m
J)
J
°
R = 23
V = 15V
V = 480V G
GE
CC
I = A 13.6 C
I = A 6.8 C
I = A 3.4 C
Ω