C&H Technology VS-GB400AH120N - Manual (Page 4)

VS-GB400AH120N
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Vishay Semiconductors
Revision: 06-Aug-12 3 Document Number: 93483
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Fig. 1 - Typical Output Characteristics
V
GE
= 15 V
Fig. 2 - Typical Transfer Characteristics
V
CE
= 20 V
Fig. 3 - Switching Loss vs. Collector Current
V
CC
= 600 V, R
g
= 4 , V
GE
= ± 15 V, T
J
= 125 °C
Fig. 4 - Switching Loss vs. Gate Resistor
V
CC
= 600 V, I
C
= 400 A, V
GE
= ± 15 V, T
J
= 125 °C
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction temperature range T
J
- 40 - 150
°C
Storage temperature range T
Stg
- 40 - 125
Junction to case

per module
IGBT
R
thJC
- - 0.05
K/W Diode - - 0.09
Case to sink R
thCS
Conductive grease applied - 0.035 -
Mounting torque
Power terminal screw: M6 2.5 to 5.0
Nm
Mounting screw: M6 3.0 to 6.0
Weight 310 g
I C
(A)
V
CE
(V)
0 1 2 4 3
0
93483_01
800
400
200
600
T
J
= 125 °C
T
J
= 25 °C
I C
(A)
V
GE
(V)
0 8 9 10 11 4 5 6 7 2 3 1 12 13
93483_02
1000
600
200
0
400
800
T
J
= 125 °C
T
J
= 25 °C
E
on
, E
off
(mJ)
I
C
(A)
0 800 600 400 200
0
20
10
30
50
70
40
60
93483_03
80
E
off
E
on
E
on
, E
off
(mJ)
R
g
( Ω)
0 25 5 10 15 20
0
20
40
60
100
120
80
93483_04
160
140
E
on
E
off