C&H Technology VSK.56.. Series - Manual (Page 9)

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8 Revision: 05-Aug-09
VSK.41.., VSK.56.. Series
Vishay High Power Products ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
Fig. 19 - On-State Voltage Drop Characteristics Fig. 20 - On-State Voltage Drop Characteristics
Fig. 21 - Thermal Impedance Z
thJC
Characteristics
Fig. 22 - Gate Characteristics
Instantaneous on-state voltage (V)
Instantaneous on-state current (A)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
1
10
100
1000
Tj = 25°C
Tj = 125°C
VSK. 41 Series
Per leg
Instantaneous on-state voltage (V)
Instantaneous on-state current (A)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
1
10
100
1000
Tj = 25°C
Tj = 125°C
VSK. 56 Series
Per leg
Square wave pulse duration (s)
Transient thermal impedance Z
thJC
(°C/W)
0.001 0.01 0.1 1 10
0.01
0.1
1
Steady state value
RthJC = 0.44 °C/W
RthJC = 0.35 °C/W
(DC operation)
Per leg
VSK.41 Series
VSK.56 Series
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
(b)
(a)
Rect angular ga te p ulse
(4) (3) (2) (1)
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
TJ
=
-4
0
°
C
TJ
=
2
5
°
C
TJ =
1
2
5
°
C
a)Recommend ed load line for
b)Recommended loa d line for
VGD
IGD
Frequenc y Limited by PG(AV)
rated di/ dt: 20 V, 30 ohms
tr = 0.5 µs, t p >= 6 µs
<= 30% ra ted di/ dt: 20 V, 65 ohms
tr = 1 µs, tp >= 6 µs
IRK.41../ .56.. Series
Instantaneous gate voltage (V)
Instantaneous gate current (A)
VSK.