Vsk.41.., vsk.56.. series, Vishay high power products – C&H Technology VSK.56.. Series User Manual
Page 4
Document Number: 94630
For technical questions, contact:
www.vishay.com
Revision: 05-Aug-09
3
VSK.41.., VSK.56.. Series
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
Vishay High Power Products
Note
•
Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.41
VSK.56
UNITS
Maximum peak gate power
P
GM
10
W
Maximum average gate power
P
G(AV)
2.5
Maximum peak gate current
I
GM
2.5
A
Maximum peak negative gate voltage
- V
GM
10
V
Maximum gate voltage required to trigger
V
GT
T
J
= - 40 °C
Anode supply = 6 V
resistive load
4.0
T
J
= 25 °C
2.5
T
J
= 125 °C
1.7
Maximum gate current required to trigger
I
GT
T
J
= - 40 °C
Anode supply = 6 V
resistive load
270
mA
T
J
= 25 °C
150
T
J
= 125 °C
80
Maximum gate voltage that will not trigger
V
GD
T
J
= 125 °C, rated V
DRM
applied
0.25
V
Maximum gate current that will not trigger
I
GD
T
J
= 125 °C, rated V
DRM
applied
6
mA
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.41
VSK.56
UNITS
Maximum peak reverse and off-state
leakage current at V
RRM
, V
DRM
I
RRM,
I
DRM
T
J
= 125 °C, gate open circuit
15
mA
Maximum RMS insulation voltage
V
INS
50 Hz
3000 (1 min)
3600 (1 s)
V
Maximum critical rate of rise of off-state voltage
dV/dt
T
J
= 125 °C, linear to 0.67 V
DRM
1000
V/µs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.41
VSK.56
UNITS
Junction operating and storage
temperature range
T
J
, T
Stg
- 40 to 125
°C
Maximum internal thermal resistance,
junction to case per leg
R
thJC
DC operation
0.44
0.35
°C/W
Typical thermal resistance,
case to heatsink per module
R
thCS
Mounting surface flat, smooth and greased
0.1
Mounting torque ± 10 %
to heatsink
A mounting compound is recommended and the
torque should be rechecked after a period of
3 h to allow for the spread of the compound.
4
Nm
busbar
3
Approximate weight
75
g
2.7
oz.
Case style
JEDEC
TO-240AA compatible
ΔR CONDUCTION PER JUNCTION
DEVICES
SINE HALF WAVE CONDUCTION
RECTANGULAR WAVE CONDUCTION
UNITS
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
VSK.41..
0.110
0.131
0.17
0.23
0.342
0.085
0.138
0.177
0.235
0.345
°C/W
VSK.56..
0.088
0.104
0.134
0.184
0.273
0.07
0.111
0.143
0.189
0.275