C&H Technology VS-GB90SA120U - Manual (Page 3)

VS-GB90SA120U
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Vishay Semiconductors
Revision:02-Aug-12 2 Document Number: 94725
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ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
BR(CES)
V
GE
= 0 V, I
C
= 250 μA 1200 - -
V
Collector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 75 A - 3.3 3.8
V
GE
= 15 V, I
C
= 75 A, T
J
= 125 °C - 3.6 3.9
V
GE
= 15 V, I
C
= 75 A, T
J
= 150 °C - 3.7 -
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 250 μA 4 5 6
V
CE
= V
GE
, I
C
= 250 μA, T
J
= 125 °C - 3.2 -
Temperature coefficient of threshold voltage V
GE(th)
/
T
J
V
CE
= V
GE
, I
C
= 1 mA (25 °C to 125 °C) - - 12 - mV/°C
Collector to emitter leakage current I
CES
V
GE
= 0 V, V
CE
= 1200 V - 7 250 μA
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 125 °C - 1.4 10
mA
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 150 °C - 6.5 20
Gate to emitter leakage current I
GES
V
GE
= ± 20 V - - ± 250 nA
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
g
I
C
= 50 A, V
CC
= 600 V, V
GE
= 15 V
- 690 -
nC Gate to emitter charge (turn-on) Q
ge
- 65 -
Gate to collector charge (turn-on) Q
gc
- 250 -
Turn-on switching loss E
on
I
C
= 75 A, V
CC
= 600 V,
V
GE
= 15 V, R
g
= 5 
L = 500 μH, T
J
= 25 °C
Energy losses
include tail and
diode recovery
Diode used
HFA16PB120
- 1.2 -
mJ Turn-off switching loss E
off
- 2.1 -
Total switching loss E
tot
- 3.3 -
Turn-on delay time t
d(on)
- 250 -
ns
Rise time t
r
- 38 -
Turn-off delay time t
d(off)
- 280 -
Fall time t
f
- 90 -
Turn-on switching loss E
on
I
C
= 75 A, V
CC
= 600 V,
V
GE
= 15 V, R
g
= 5 
L = 500 μH, T
J
= 125 °C
- 1.7 -
mJ Turn-off switching loss E
off
- 4.08 -
Total switching loss E
tot
- 5.78 -
Turn-on delay time t
d(on)
- 245 -
ns
Rise time t
r
- 48 -
Turn-off delay time t
d(off)
- 280 -
Fall time t
f
- 140 -
Reverse bias safe operating area RBSOA
T
J
= 150 °C, I
C
= 200 A, R
g
= 22

V
GE
= 15 V to 0 V, V
CC
= 900 V,
V
P
= 1200 V, L = 500 μH
Fullsquare
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Maximum junction and storage temperature range T
J
, T
Stg
- 40 - 150 °C
Junction to case thermal resistance IGBT R
thJC
- - 0.145
°C/W
Case to sink thermal resistance, flat, greased surface R
thCS
- 0.1 -
Mounting torque, on terminals and heatsink - - 1.3 Nm
Weight - 30 - g
Case style SOT-227