C&H Technology GB100DA60UP - Manual (Page 4)

GB100DA60UP
Vishay Semiconductor Italy
3 Revision 28-Mar-08
THERMAL-MECHANICAL SPECIFICATIONS
V
FM
Diode Forward Voltage Drop 1.6 V I
C
= 100A, V
GE
= 0V
1.7 I
C
= 100A, V
GE
= 0V, T
J
= 125°C
trr Diode Reverse Recovery Time 96 ns V
CC
= 200V, I
C
= 50A
Irr Diode Peak Reverse Current 10 A dI/dt = 200A/ μ sec
Qrr Diode Recovery Charge 480 nC
trr Diode Reverse Recovery Time 142 ns V
CC
= 200V, I
C
= 50A
Irr Diode Peak Reverse Current 16 A dI/dt = 200A/ μ sec
Qrr Diode Recovery Charge 1136 nC T
J
= 125°C
T
J
Operating Junction - 40 150 °C
T
STG
Storage Temperature Range - 40 150
R
thCS
Case-to-Sink, Flat, Greased Surface 0.05
R
thJC
Junction-to-case Diode 0.4 °C/W
Igbt 0.28
T Mounting torque, 6-32 or M3 Screw 1.3 Nm
Wt Weight 30 g
PARAMETERS MIN TYP MAX UNITS
PARAMETERS MIN TYP MAX UNITS TEST CONDITIONS
DIODE CHARACTERISTICS @ T
J
= 25°C
(unless otherwise specified)