C&H Technology GB100DA60UP - Manual (Page 3)

GB100DA60UP
Vishay Semiconductor Italy
2 Revision 28-Mar-08
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 V V
GE
= 0V, I
C
= 500μA
V
CE(on)
Collector-to-Emitter Voltage 2.4 V
GE
= 15V, I
C
= 100A
3 V
GE
= 15V, I
C
= 100A, T
J
= 125°C
V
GE(th)
Gate Threshold Voltage 4 I
C
= 0.5mA
I
CES
Collector-to-Emiter Leaking 7 μA V
GE
= 0V, V
CE
= 600V
Current 4 mA V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current ± 200 nA V
GE
= ± 20V
PARAMETERS MIN TYP MAX UNITS TEST CONDITIONS
Q g Total Gate Charge (turn-on) 460 690 nC I
C
= 100A
Q ge Gate-Emitter Charge (turn-on) 160 250 V
CC
= 480V
Q
gc
Gate-Collector Charge (turn-on) 70 130 V
GE
= 15V
E
on
Turn-On Switching Loss 360 μJ R
G
= 5 Ω
E
off
Turn-Off Switching Loss 1420 I C = 100A, V CC = 360V, V GE = 15V, L = 500μH
E ts Total Switching Loss 1780 Energy losses include tail and diode reverse
recovery
E
on
Turn-On Switching Loss 520 μJ R
G
= 5 Ω
E off Turn-Off Switching Loss 1600 I
C
= 100A, V
CC
= 360V, V
GE
= 15V, L = 500μH
E
ts
Total Switching Loss 2120 Energy losses include tail and diode reverse
recovery,
T
J
= 125°C
td
on
Turn-On Delay Time 260 ns R
G
= 5 Ω
t r Rise Time 53 I
C
= 100A, V
CC
= 360V, V
GE
= 15V, L = 500μH
td
off
Turn-Off Delay Time 248 Energy losses include tail and diode reverse
t f Fail Time 76 recovery
td
on
Turn-On Delay Time 264 ns R
G
= 5 Ω
t
r
Rise Time 54 I C = 100A, V CC = 360V, V GE = 15V, L = 500μH
td
off
Turn-Off Delay Time 254 Energy losses include tail and diode reverse
t f Fail Time 80 recovery, T
J
= 125°C
C
ies
Input Capacitance 8000 pF V
GE
= 0V
C
oes
Output Capacitance 790 V
CC
= 30V
C
res
Reverse Transfer Capacitance 110 f = 1.0 MHz
RBSOA Reverse Bias Safe Operating Area full square T
J
= 150°C, I
C
= 300A
V
CC
= 400V, V
P
= 600V
R
G
= 22 Ω, V
GE
= +15V to 0V
ELECTRICAL CHARACTERISTICS @ T
J
= 25°C
(unless otherwise specified)
PARAMETERS MIN TYP MAX UNITS TEST CONDITIONS
SWITCHING CHARACTERISTICS @ T
J
= 25°C (unless otherwise specified)