C&H Technology GB75DA120UP - Manual (Page 9)

Document Number: 93011 For technical questions, contact: [email protected] www.vishay.com
Revision: 23-Apr-09 7
GB75DA120UP
Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 75 A
Vishay High Power Products
Fig. 18b - Switching Loss Waveforms Test Circuit
ORDERING INFORMATION TABLE
t = 5 µs t
d(on)
t
f t
r
90 %
t
d(off)
10 %
90 %
10 %
5 %
V
C
I
C
E
on
E
off
E
ts
= (E
on
+ E
off
)
1
2
3
1 - Insulated Gate Bipolar Transistor (IGBT)
2 - B = IGBT Generation 5
3 - Current rating (75 = 75 A)
4 - Circuit configuration (D = Single switch with antiparallel diode)
5 - Package indicator (A = SOT-227)
6 - Voltage rating (120 = 1200 V)
8 - Totally lead (Pb)-free
7 - Speed/type (U = Ultrafast IGBT)
Device code
5 1 3 2 4 6 7 8
G B 75 D A 120 U P