Datasheet, Vishay high power products – C&H Technology GB75DA120UP User Manual
Page 2
Document Number: 93011
For technical questions, contact:
www.vishay.com
Revision: 23-Apr-09
1
Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 75 A
GB75DA120UP
Vishay High Power Products
FEATURES
• NPT Generation V IGBT technology
• Square RBSOA
• HEXFRED
®
low Q
rr
, low switching energy
• Positive V
CE(on)
temperature coefficient
• Fully isolated package
• Speed 8 kHz to 60 kHz
• Very low internal inductance (
≤ 5 nH typical)
• Industry standard outline
• Compliant to RoHS directive 2002/95/EC
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
PRODUCT SUMMARY
V
CES
1200 V
I
C
DC
75 A at 95 °C
V
CE(on)
typical at 75 A, 25 °C
3.3 V
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
TEST
CONDITIONS
MAX.
UNITS
Collector to emitter voltage
V
CES
1200
V
Continuous collector current
I
C
T
C
= 25 °C
131
A
T
C
= 80 °C
89
Pulsed collector current
I
CM
200
Clamped inductive load current
I
LM
200
Diode continuous forward current
I
F
T
C
= 25 °C
59
T
C
= 80 °C
39
Gate to emitter voltage
V
GE
± 20
V
Power dissipation, IGBT
P
D
T
C
= 25 °C
658
W
T
C
= 80 °C
369
Power dissipation, diode
P
D
T
C
= 25 °C
240
T
C
= 80 °C
135
Isolation voltage
V
ISOL
Any terminal to case, t = 1 min
2500
V