C&H Technology CM900HB-90H - Manual (Page 5)

Mar. 2003
MITSUBISHI HVIGBT MODULES
CM900HB-90H
HIGH POWER SWITCHING USE
INSULATED TYPE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
7
5
3
2
7 10 2 2 3 5 7 10 3 2 3 5
10 –1
10 –2
7
5
3
2
10 0
7
5
3
2
10 1
7
5
3
2
10 3
10 2
7
5
3
2
10 4
7
5
3
2
10 5
5
7
5
3
2
7 10 2
10 –1
7
2 3 5 7 10 3 2 3 5
5
5
3
2
10 1
7
5
3
2
10 0
5
V CC = 2250V, V GE =
±
15V
R G = 10 Ω , T j = 125 ° C
Inductive load
V CC = 2250V, T j = 125 ° C
Inductive load
IGBT drive conditions
V
GE = ± 15V, R G = 10 Ω
10 –2
10 –3 10 –2 10 –1 10 0
7
5
3
2
10 –1
7
5
3
2
10 0
10 1
7
5
3
2
2 3 5 7 2 3 5 7 2 3 5 7
Single Pulse
T
C = 25 ° C
R th(j – c)Q = 0.009K/ W
R th(j – c)R = 0.018K/ W
20
16
12
8
4
0
0 2000 4000 6000 8000 10000 12000
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
SWITCHING TIMES
(
µ s
)
COLLECTOR CURRENT I C (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
REVERSE RECOVERY TIME t
rr
(
µ
s
)
EMITTER CURRENT I E (A)
REVERSE RECOVERY CURRENT I
rr
(
A
)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j
–
c)
TIME (s)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(
V
)
GATE CHARGE Q G (nC)
3.0
2.5
2.0
1.5
1.0
0.5
0
0 5 10 15 20 30 25
GATE RESISTANCE ( Ω )
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
SWITCHING ENERGY
( J/P
)
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0 300 600 900 1200 1500 1800
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
CURRENT (A)
SWITCHING ENERGY
( J/P
)
V CC = 2250V, V GE = ± 15V,
R G = 10 Ω , Tj = 125 ° C,
Inductive load
E on
t d(off)
t d(on)
t r
t rr
I rr
t f
E off
E rec
V CC = 2250V
I C = 900A