Mitsubishi hvigbt modules – C&H Technology CM900HB-90H User Manual
Page 4
Mar. 2003
MITSUBISHI HVIGBT MODULES
CM900HB-90H
HIGH POWER SWITCHING USE
INSULATED TYPE
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
10
1
2 3
10
–1
5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
10
3
7
5
3
2
10
2
7
5
3
2
7
5
3
2
10
0
V
GE
= 15V, T
j
= 25
°
C
C
ies,
C
oes
: f = 100kHz
C
res
: f = 1MHz
6000
4000
2000
0
20
0
4
8
12
8000
16
12000
10000
0
8
6
4
2
1800
0
300
600
1200
900
1500
0
300
600
900
1200
1500
1800
10
0
2
4
6
8
T
j
= 25
°
C
V
CE
= 10V
T
j
= 25
°
C
T
j
= 125
°
C
V
GE
= 15V
T
j
= 25
°
C
T
j
= 125
°
C
0
20
16
12
8
4
10
8
6
4
2
0
T
j
= 25
°
C
CAPACITANCE CHARACTERISTICS
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(
nF
)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(
A
)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(
A
)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(
V
)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(
V
)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
Ic=1800A
Ic=900A
Ic=450A
V
GE
=20V
V
GE
=15V
V
GE
=14V
V
GE
=12V
V
GE
=10V
V
GE
=8V
1800
0
300
600
1200
900
1500
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER-COLLECTOR VOLTAGE V
EC
(
V
)
EMITTER CURRENT I
E
(A)
8
6
4
2
0
T
j
= 25
°
C
T
j
= 125
°
C
C
ies
C
oes
C
res