C&H Technology CPV362M4UPbF - Manual (Page 9)

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8 Revision: 01-Sep-08
CPV362M4UPbF
Vishay High Power Products IGBT SIP Module
(Fast IGBT)
Fig. 18a - Test Circuit for Measurement of
I
LM
, E
on
, E
off(diode)
, t
rr
, Q
rr
, I
rr
, t
d(on)
, t
r
, t
d(off)
, t
f
Fig. 18b - Test Waveforms for Circuit of Fig. 18a,
Defining E
off
, t
d(off)
, t
f
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining E
on
, t
d(on)
, t
r
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining E
rec
, t
rr
, Q
rr
, I
rr
Same type
device as
D.U.T.
D.U.T.
430 µF 80 %
of V
CE
t1
Ic
Vce
t1 t2
90% Ic
td(off) tf
Ic
5% Ic
t1+5μS
Vce ic dt
90% Vge
+Vge
∫
Eoff = Vce Ic dt
10% Vce
∫
Vce ie dt
t2
t1
5% Vce
Ic
Ipk Vcc
10% Ic
Vce
t1 t2
DUT VOLTAGE
AND CURRENT
GATE VOLTAGE D.U.T.
+Vg
10% +Vg
90% Ic
tr td(on)
Eon = Vce Ie dt
DIODE REVERSE
RECOVERY ENERGY
tx
∫
Erec =
t4
t3
t4 t3
DIODE RECOVERY
WAVEFORMS
Ic
Vpk
10% Vcc
Irr
10% Irr
Vcc
trr
∫
Qrr =
trr
tx
id dt
Vd Id dt
Id dt