Datasheet, Igbt sip module (fast igbt) cpv362m4upbf, Vishay high power products – C&H Technology CPV362M4UPbF User Manual
Page 2: Rohs
Document Number: 94483
For technical questions, contact: [email protected]
www.vishay.com
Revision: 01-Sep-08
1
IGBT SIP Module
(Fast IGBT)
CPV362M4UPbF
Vishay High Power Products
FEATURES
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all “tail” losses
• HEXFRED
®
soft ultrafast diodes
• Optimized for high speed over 5 kHz
See fig. 1 for current vs. frequency curve
• Totally lead (Pb)-free
• Designed and qualified for industrial level
DESCRIPTION
The IGBT technology is the key to Vishay´s HPP advanced
line of IMS (Insulated Metal Substrate) power modules.
These modules are more efficient than comparable bipolar
transistor modules, while at the same time having the simpler
gate-drive requirements of the familiar power MOSFET. This
superior technology has now been coupled to a state of the
art materials system that maximizes power throughput with
low thermal resistance. This package is highly suited to
motor drive applications and where space is at a premium.
Notes
(1)
Repetitive rating; V
GE
= 20 V, pulse width limited by maximum junction temperature (see fig. 20)
(2)
V
CC
= 80 % (V
GES
), V
GE
= 20 V, L = 10 µH, R
G
= 50
Ω (see fig.19)
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE
I
RMS
per phase (3.1 kW total)
with T
C
= 90 °C
4.6 A
RMS
T
J
125 °C
Supply voltage
360 Vdc
Power factor
0.8
Modulation depth (see fig. 1)
115 %
V
CE(on)
(typical)
at I
C
= 3.9 A, 25 °C
1.7 V
IMS-2
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
TEST
CONDITIONS
MAX.
UNITS
Collector to emitter voltage
V
CES
600
V
Continuous collector current, each IGBT
I
C
T
C
= 25 °C
7.2
A
T
C
= 100 °C
3.9
Pulsed collector current
I
CM
(1)
22
Clamped inductive load current
I
LM
(2)
Diode continuous forward current
I
F
T
C
= 100 °C
3.4
Diode maximum forward current
I
FM
22
Gate to emitter voltage
V
GE
± 20
V
Isolation voltage
V
ISOL
1 minute, any terminal to case
2500
V
RMS
Maximum power dissipation, each IGBT
P
D
T
C
= 25 °C
23
W
T
C
= 100 °C
9.1
Operating junction and storage temperature range
T
J
, T
Stg
- 40 to + 150
°C
Soldering temperature
10 s, (0.063" (1.6 mm) from case)
300
Mounting torque
6-32 or M3 screw
5 to 7
(0.55 to 0.8)
lbf · in
(N · m)