C&H Technology HFA50PA60C User Manual
Hexfred, Vishay high power products
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Document Number: 93096
For technical questions, contact: [email protected]
www.vishay.com
Revision: 29-Jul-08
1
HEXFRED
®
Ultrafast, Soft Recovery Diode, 2 x 25 A
HFA50PA60C
Vishay High Power Products
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low I
RRM
• Very low Q
rr
• Specified at operating conditions
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
HFA50PA60C is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial construction
and advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 25 A per leg continuous
current, the HFA50PA60C is especially well suited for use as
the companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
®
product line features
extremely low values of peak recovery current (I
RRM
) and
does not exhibit any tendency to “snap-off” during the
t
b
portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA50PA60C is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
PRODUCT SUMMARY
V
R
600 V
V
F
at 25 A at 25 °C
1.7 V
I
F(AV)
2 x 25 A
t
rr
(typical)
23 ns
T
J
(maximum)
150 °C
Q
rr
(typical)
112 nC
dI
(rec)M
/dt (typical) at 125 °C
160 A/µs
I
RRM
(typical)
4.5 A
TO-247AC
Base
common
cathode
Common
cathode
2
2
1
3
Anode
1
Anode
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
TEST
CONDITIONS
MAX.
UNITS
Cathode to anode voltage
V
R
600
V
Maximum continuous forward current
per leg
I
F
T
C
= 100 °C
25
A
per device
50
Single pulse forward current
I
FSM
225
Maximum repetitive forward current
I
FRM
100
Maximum power dissipation
P
D
T
C
= 25 °C
150
W
T
C
= 100 °C
60
Operating junction and storage temperature range
T
J
, T
Stg
- 55 to + 150
°C