Vishay high power products – C&H Technology VSK.250PbF Series User Manual
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Document Number: 94417
2
Revision: 08-Oct-09
VSK.170PbF, VSK.250PbF Series
Vishay High Power Products
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
V
RRM
/V
DRM
, MAXIMUM REPETITIVE
PEAK REVERSE AND OFF-STATE
BLOCKING VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
I
RRM
/I
DRM
AT 130 °C
MAXIMUM
mA
VSK.170-
04
400
500
50
08
800
900
10
1000
1100
12
1200
1300
14
1400
1500
16
1600
1700
VSK.250-
04
400
500
50
08
800
900
10
1000
1100
12
1200
1300
14
1400
1500
16
1600
1700
18
1800
1900
60
20
2000
2100
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.170
VSK.250
UNITS
Maximum average on-state current
at case temperature
I
T(AV)
180° conduction, half sine wave
170
250
A
85
85
°C
Maximum RMS on-state current
I
T(RMS)
As AC switch
377
555
A
Maximum peak, one-cycle on-state
non-repetitive, surge current
I
TSM
t = 10 ms
No voltage
reapplied
Sinusoidal
half wave,
initial T
J
=
T
J
maximum
5100
8500
t = 8.3 ms
5350
8900
t = 10 ms
100 % V
RRM
reapplied
4300
7150
t = 8.3 ms
4500
7500
Maximum I
2
t for fusing
I
2
t
t = 10 ms
No voltage
reapplied
131
361
kA
2
s
t = 8.3 ms
119
330
t = 10 ms
100 % V
RRM
reapplied
92.5
255
t = 8.3 ms
84.4
233
Maximum I
2
√t for fusing
I
2
√t
t = 0.1 ms to 10 ms, no voltage reapplied
1310
3610
kA
2
√s
Low level value or threshold voltage
V
T(TO)1
(16.7 % x
π x I
T(AV)
< I <
π x I
T(AV)
),
T
J
= T
J
maximum
0.89
0.97
V
High level value of threshold voltage
V
T(TO)2
(I >
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
maximum
1.12
1.00
Low level value on-state slope resistance
r
t1
(16.7 % x
π x I
T(AV)
< I <
π x I
T(AV)
),
T
J
= T
J
maximum
1.34
0.60
m
Ω
High level value on-state slope resistance
r
t2
(I
>
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
maximum
0.96
0.57
Maximum on-state voltage drop
V
TM
I
TM
=
π x I
T(AV)
, T
J
= T
J
maximum, 180° conduction,
average power = V
T(TO)
x I
T(AV)
+ r
f
x (I
T(RMS)
)
2
1.60
1.44
V
Maximum holding current
I
H
Anode supply = 12 V, initial I
T
= 30 A, T
J
= 25 °C
500
500
mA
Maximum latching current
I
L
Anode supply = 12 V, resistive load = 1
Ω,
gate pulse: 10 V, 100 µs, T
J
= 25 °C
1000
1000