Vishay semiconductors, Thermal and mechanical specifications – C&H Technology VS-GB200TH120N User Manual
Page 4
VS-GB200TH120N
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Vishay Semiconductors
Revision: 17-Sep-12
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Document Number: 94763
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Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Typical Transfer Characteristics
Fig. 3 - IGBT Switching Loss vs. I
C
Fig. 4 - IGBT Switching Loss vs. R
g
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Operating junction temperature range
T
J
-
-
150
°C
Storage temperature range
T
STG
- 40
-
125
Junction to case
IGBT
R
thJC
-
-
0.11
K/W
Diode
-
-
0.14
Case to sink
R
thCS
Conductive grease applied
-
0.035
-
Mounting torque
Power terminal screw: M6
2.5 to 5.0
Nm
Mounting screw: M6
3.0 to 5.0
Weight
300
g
0
50
100
200
300
400
0
0.5
1.5
2.5
3.5
1
2
3
4
150
250
350
125 °C
25 °C
V
GE
= 15 V
I
C
(A)
V
CE
(V)
0
50
100
200
300
400
4
5
7
9
11
6
8
10
12
150
250
350
125 °C
25 °C
V
CE
= 20 V
I
C
(A)
V
GE
(V)
0
80
240
160
320
400
E
on
, E
of
f
(mJ)
0
10
20
30
40
50
60
V
GE
= ± 15 V
T
J
=
125 °C
R
g
= 5.1
Ω
V
CC
= 600 V
I
C
(A)
E
on
E
off
0
10
30
20
40
50
E
on
, E
of
f
(mJ)
0
20
40
60
80
100
120
V
GE
= ± 15 V
T
J
=
125 °C
V
CC
= 600 V
R
g
(
Ω)
I
C
= 200 A
E
on
E
off