C&H Technology VS-GB200TH120N - Manual (Page 3)

VS-GB200TH120N
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Vishay Semiconductors
Revision: 17-Sep-12 2 Document Number: 94763
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IGBT ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
T
J
= 25 °C 1200 - -
V Collector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 200 A, T
J
= 25 °C - 1.90 2.35
V
GE
= 15 V, I
C
= 200 A, T
J
= 125 °C - 2.10 -
Gate to emitter threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 8.0 mA, T
J
= 25 °C 5.0 6.2 7.0
Collector cut-off current I
CES
V
CE
= V
CES
, V
GE
= 0 V, T
J
= 25 °C - - 5.0 mA
Gate to emitter leakage current I
GES
V
GE
= V
GES
, V
CE
= 0 V, T
J
= 25 °C - - 400 nA
SWITCHING CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 200 A, R
g
= 5.1
,
V
GE
= ± 15 V, T
J
= 25 °C
- 437 -
ns
Rise time t
r
- 75 -
Turn-off delay time t
d(off)
- 436 -
Fall time t
f
- 165 -
Turn-on switching loss E
on
- 10.0 -
mJ
Turn-off switching loss E
off
- 15.0 -
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 200 A, R
g
= 5.1 ,
V
GE
= ± 15 V, T
J
= 125 °C
- 445 -
ns
Rise time t
r
- 96 -
Turn-off delay time t
d(off)
- 488 -
Fall time t
f
- 258 -
Turn-on switching loss E
on
- 15.9 -
mJ
Turn-off switching loss E
off
- 22.3 -
Input capacitance C
ies
V
GE
= 0 V, V
CE
= 25 V, f = 1.0 MHz
- 14.9 -
nF Output capacitance C
oes
- 1.04 -
Reverse transfer capacitance C
res
- 0.68 -
SC data I
SC
t
sc
 10 μs, V
GE
= 15 V, T
J
= 125 °C,
V
CC
= 900 V, V
CEM
 1200 V
- 1200 - A
Internal gate resistance R
gint
- 1.0 - 
Stray inductance L
CE
- - 20 nH
Module lead resistance, terminal to chip R
CC’+EE’
T
C
= 25 °C - 0.35 - m 
DIODE ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Diode forward voltage V
F
I
F
= 200 A
T
J
= 25 °C - 1.82 2.25
V
T
J
= 125 °C - 1.95 -
Diode reverse recovery charge Q
rr
I
F
= 200 A, V
R
= 600 V,
dI/dt = - 2370 A/μs,
V
GE
= - 15 V
T
J
= 25 °C - 16.6 -
μC
T
J
= 125 °C - 29.2 -
Diode peak reverse recovery current I
rr
T
J
= 25 °C - 156 -
A
T
J
= 125 °C - 210 -
Diode reverse recovery energy E
rec
T
J
= 25 °C - 9.3 -
mJ
T
J
= 125 °C - 16.0 -