C&H Technology ST333C..L SERIES - Manual (Page 4)

ST333C..L Series
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Bulletin I25187 rev. B 04/00
V
TM
Max. peak on-state voltage 1.96 I
TM
= 1810A, T
J
= T
J
max, t
p
= 10ms sine wave pulse
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t 1
Low level value of forward
slope resistance
r
t 2
High level value of forward
slope resistance
I
H
Maximum holding current 600 T
J
= 25°C, I
T
> 30A
I
L
Typical latching current 1000 T
J
= 25°C, V
A
= 12V, Ra = 6 Ω, I
G
= 1A
Parameter ST333C..L Units Conditions
On-state Conduction
0.91 (16.7% x π x I
T(AV)
< I < π x I
T(AV)
), T
J
= T
J
max.
0.93 (I > π x I
T(AV)
), T
J
= T
J
max.
V
0.58 (16.7% x π x I
T(AV)
< I < π x I
T(AV)
), T
J
= T
J
max.
0.58 (I > π x I
T(AV)
), T
J
= T
J
max.
m Ω
mA
di/dt Max. non-repetitive rate of rise T
J
= T
J
max, V
DRM
= rated V
DRM
of turned-on current I
TM
= 2 x di/dt
T
J
= 25°C, V
DM
= rated V
DRM
, I
TM
= 50A DC, t
p
= 1µs
Resistive load, Gate pulse: 10V, 5 Ω source
T
J
= T
J
max, I
TM
= 550A, commutating di/dt = 40A/µs
V
R
= 50V, t
p
= 500µs, dv/dt: see table in device code
Switching
Parameter ST333C..L Units Conditions
1000 A/µs
t
d
Typical delay time 1.1
Min Max
dv/dt Maximum critical rate of rise of T
J
= T
J
max. linear to 80% V
DRM
, higher value
off-state voltage available on request
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Parameter ST333C..L Units Conditions
Blocking
500 V/ µs
50 mA T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
Maximum peak gate power 60
P
G(AV)
Maximum average gate power 10
I
GM
Max. peak positive gate current 10 A T
J
= T
J
max, t
p
≤ 5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
Max. DC gate current required
to trigger
V
GT
Max. DC gate voltage required
to trigger
I
GD
Max. DC gate current not to trigger 20 mA
V
GD
Max. DC gate voltage not to trigger 0.25 V
Triggering
Parameter ST333C..L Units Conditions
W T
J
= T
J
max., f = 50Hz, d% = 50
20
5
V T
J
= T
J
max, t
p
≤ 5ms
200 mA
3 V
T
J
= 25°C, V
A
= 12V, Ra = 6 Ω
T
J
= T
J
max, rated V
DRM
applied
10 30
µs
t
q
Max. turn-off time