C&H Technology CM600HB-90H - Manual (Page 4)

3
CM600HB-90H
Single IGBTMOD™ HVIGBT
600 Amperes/4500 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C ies – 108 – nF
Output Capacitance C
oes
V
GE
= 0V, V
CE
= 10V – 8.0 – nF
Reverse Transfer Capacitance C
res
– 2.4 – nF
Resistive Turn-on Delay Time t
d(on)
V
CC
= 2250V, I
C
= 600A, – – 2.4 µ s
Load Rise Time t
r
V
GE1
= V
GE2
= 15V, – – 2.4
µ
s
Switching Turn-off Delay Time t d(off) R G = 15
Ω
– – 6.0
µ
s
Times Fall Time t f Resistive Load Switching Operation – – 1.2
µ
s
Diode Reverse Recovery Time** t
rr
I
E
= 600A, di
E
/dt = -1200A/
µ
s – – 1.8
µ
s
Diode Reverse Recovery Charge** Q
rr
I
E
=600A, di
E
/dt = -1200A/
µ
s – 240* –
µ
C
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Thermal and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
th(j-c)
Q Per IGBT – – 0.015 K/W
Thermal Resistance, Junction to Case R
th(j-c)
D Per FWDi – – 0.030 K/W
Contact Thermal Resistance, Case to Fin R th(c-f) Per Module, Thermal Grease Applied – 0.010 – K/W