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C&H Technology CM600HB-90H User Manual

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CM600HB-90H
Single IGBTMOD™ HVIGBT
600 Amperes/4500 Volts

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

Absolute Maximum Ratings,

T

j

= 25

°

C unless otherwise specified

Ratings

Symbol

CM600HB-90H

Units

Junction Temperature

T

j

-40 to 150

°

C

Storage Temperature

T

stg

-40 to 125

°

C

Collector-Emitter Voltage (V

GE

= 0V)

V

CES

4500

Volts

Gate-Emitter Voltage (V

CE

= 0V)

V

GES

±

20

Volts

Collector Current (T

c

= 25

°

C)

I

C

600

Amperes

Peak Collector Current (Pulse)

I

CM

1200*

Amperes

Diode Forward Current** (T

c

= 25

°

C)

I

E

600

Amperes

Diode Forward Surge Current** (Pulse)

I

EM

1200*

Amperes

Maximum Collector Dissipation (T

c

= 25

°

C, IGBT Part, T

j

125

°

C)

P

C

6700

Watts

Max. Mounting Torque M8 Terminal Screws – 115 in-lb

Max. Mounting Torque M6 Mounting Screws – 53 in-lb

Max. Mounting Torque M4 Auxiliary Terminal Screws – 17 in-lb

Module Weight (Typical)

1.5

kg

Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.)

V

iso

6000

Volts

* Pulse width and repetition rate should be such that device junction temperature (T

j

) does not exceed T

j(max)

rating.

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Static Electrical Characteristics,

T

j

= 25

°

C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Collector-Cutoff Current

I

CES

V

CE

= V

CES

, V

GE

= 0V

12.0

mA

Gate Leakage Current

I

GES

V

GE

= V

GES

, V

CE

= 0V

0.5

µ

A

Gate-Emitter Threshold Voltage

V

GE(th)

I

C

= 60mA, V

CE

= 10V

4.5

6.0

7.5

Volts

Collector-Emitter Saturation Voltage

V

CE(sat)

I

C

= 600A, V

GE

= 15V, T

j

= 25

°

C

3.0

3.9*

Volts

I

C

= 600A, V

GE

= 15V, T

j

= 125

°

C

3.3

Volts

Total Gate Charge

Q

G

V

CC

= 2250V, I

C

= 600A, V

GE

= 15V – 5.4 –

µ

C

Emitter-Collector Voltage**

V

EC

I

E

= 600A, V

GE

= 0V

4.0

5.2

Volts

* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).