C&H Technology VS-GA100TP60S - Manual (Page 5)

VS-GA100TP60S
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Vishay Semiconductors
Revision: 28-Nov-12 4 Document Number: 94811
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Fig. 5 - Gate Charge Characteristics
Fig. 6 - Typical Capacitance vs. Collector-Emitter Voltage
Fig. 7 - Typical Switching Time vs. I
C
Fig. 8 - Typical Switching Time vs. Gate Resistance
Fig. 9 - Typical Forward Characteristics (Diode)
V
G
E
(V)
Q
g
(μC)
0 0.1 0.2 0.3 0.4 0.6 0.5 0.7
0
8
4
2
6
10
12
14
16
V
CC
= 400 V
T
J
= 25 °C
I
C
= 100 A
V
CE
(V)
C (nF)
10 1
10 2
10 0
10 -1
0 5 10 15 20 25 30 35
C
oes
C
res
C
ies
10 1
10 2
10 3
0 50 100 150 200 250
t
d(off)
t
d(on)
t
f
t
r
V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 2.2 Ω
V
CC
= 300 V
I
C
(A)
t (ns)
10 1
10 2
10 3
0 10 20 30 40 50 60 70
t
d(off)
t
d(on)
t
f
t
r t (ns)
V
GE
= ± 15 V
T
J
= 125 °C
I
C
= 100 A
V
CC
= 300 V
R
g
( Ω)
200
175
150
125
100
75
50
25
0
1.5 2 0.5 0 1
25 °C
125 °C
V
F
(V)
I F
(A)