Vishay semiconductors, Thermal and mechanical specifications – C&H Technology VS-GA100TP60S User Manual
Page 4
VS-GA100TP60S
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Vishay Semiconductors
Revision: 28-Nov-12
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Document Number: 94811
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Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Transfer Characteristics
Fig. 3 - Switching Loss vs. I
C
Fig. 4 - Switching Loss vs. R
g
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Operating junction temperature range
T
J
- 40
-
150
°C
Storage temperature range
T
Stg
- 40
-
125
°C
Junction to case
(per 1/2 module)
IGBT
R
thJC
-
-
0.17
K/W
Diode
-
-
0.48
Case to sink (Conductive grease applied)
R
thCS
-
0.05
-
Mounting torque
Power terminal screw: M5
2.5 to 5.0
Nm
Mounting screw: M6
3.0 to 6.0
Weight
Weight of module
-
180
-
g
200
180
160
140
120
100
80
60
40
20
0
1.5
2
0.5
0
1
2.5
3
3.5
25 °C
125 °C
V
GE
= 15 V
V
CE
(V)
I
C
(A)
200
180
160
140
120
100
80
60
40
20
0
8
9
6
5
7
10
11
12
13
125 °C
V
CE
= 20 V
V
GE
(V)
I
C
(A)
25 °C
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
100
0
50
150
200
V
GE
= ± 15 V
T
J
=
125 °C
R
g
= 2.2
Ω
V
CC
= 300 V
E
on
E
off
I
C
(A)
E
on
, E
of
f
(mJ)
0
2
6
4
8
10
0
2
1
0.5
1.5
2.5
3
E
on
, E
of
f
(mJ)
R
g
(
Ω)
V
GE
= ± 15 V
T
J
=
125 °C
I
C
= 100 A
V
CC
= 300 V
E
on
E
off