Vishay semiconductors – C&H Technology VSKDS201-045 User Manual
Page 5
VSKDS201/045
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Vishay Semiconductors
Revision: 04-Jan12
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Document Number: 93234
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Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
200
150
100
50
250
300
0
80
140
180
0
40
60
100
160
120
20
93234_05
Square wave (D = 0.50)
Rated V
R
applied
See note (1)
DC
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
80
120
100
140
60
40
20
160
0
93234_06
80
100
120
0
40
60
20
D = 0.75
D = 0.20
D = 0.25
D = 0.33
D = 0.50
RMS limit
DC
1000
10
100
t
p
- Square Wave Pulse Duration (µs)
I
FSM
- Non-Repetitive Sur
g
e Current (A)
93234_07
1000
10 000
10 000
At any rated load condition
and with rated V
RRM
applied
following surge
Current
monitor
High-speed
switch
D.U.T.
R
g
= 25
Ω
+
Freewheel
diode
V
d
= 25 V
L
IRFP460
40HFL40S02