Vishay semiconductors, Dynamic recovery characteristics (t, 25 °c unless otherwise specified) – C&H Technology VS-HFA220FA120 User Manual
Page 3: Thermal - mechanical specifications
VS-HFA220FA120
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Vishay Semiconductors
Revision: 22-Mar-12
2
Document Number: 93636
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Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL
TEST
CONDITIONS MIN.
TYP.
MAX.
UNITS
Reverse recovery time
t
rr
T
J
= 25 °C
I
F
= 1 A
dI
F
/dt = - 200 A/μs
V
R
= 30 V
-
58
-
ns
T
J
= 25 °C
I
F
= 50 A
dI
F
/dt = - 200 A/μs
V
R
= 200 V
-
157
-
T
J
= 125 °C
-
255
-
Peak recovery current
I
RRM
T
J
= 25 °C
-
15
-
A
T
J
= 125 °C
-
22.5
-
Reverse recovery charge
Q
rr
T
J
= 25 °C
-
1150
-
nC
T
J
= 125 °C
-
2850
-
Junction capacitance
C
T
V
R
= 1200 V
-
53
-
pF
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Junction to case, single leg conducting
R
thJC
-
-
0.25
°C/W
Junction to case, both legs conducting
-
-
0.125
Case to heatsink
R
thCS
Flat, greased and surface
-
0.10
-
Weight
-
30
-
g
Mounting torque
-
1.3
-
Nm
1
10
100
1000
0.5
1
1.5
2
2.5
3
3.5
4
I
F
-
Insta
nta
ne
ous Forwa
rd
Curre
nt
(A)
V
F
- Forward Voltage Drop (V)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.0001
0.001
0.01
0.1
1
10
0
200
400
600
800
1000
1200
I
R
-
R
e
v
e
rse
Curre
nt
(μA)
V
R
- Reverse Voltage (V)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C