Hexfred, Ultrafast soft recovery diode, 220 a, Vishay semiconductors – C&H Technology VS-HFA220FA120 User Manual
Page 2
VS-HFA220FA120
www.vishay.com
Vishay Semiconductors
Revision: 22-Mar-12
1
Document Number: 93636
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
HEXFRED
®
Ultrafast Soft Recovery Diode, 220 A
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION/APPLICATIONS
The dual diode series configuration (VS-HFA220FA120) is
used for output rectification or freewheeling/clamping
operation and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
These modules are intended for general applications such
as HV power supplies, electronic welders, motor control and
inverters.
Note
(1)
Maximum continuous forward current must be limited at 100 A to do not exceed the maximum temperature of power terminals.
PRODUCT SUMMARY
V
R
1200 V
V
F
(typical)
2.68 V
t
rr
(typical)
58 ns
I
F(AV)
per module at T
C
220 A at 38 °C
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
TEST
CONDITIONS
MAX.
UNITS
Cathode to anode voltage
V
R
1200
V
Continuous forward current
I
F
(1)
T
C
= 68 °C
110
A
Single pulse forward current
I
FSM
T
J
= 25 °C
700
Maximum power dissipation per leg
P
D
T
C
= 25 °C
500
W
T
C
= 100 °C
400
RMS isolation voltage
V
ISOL
Any terminal to case, t = 1 minute
2500
V
Operating junction and storage
temperature range
T
J
, T
Stg
- 55 to 150
°C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL
TEST
CONDITIONS MIN.
TYP.
MAX.
UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100 μA
1200
-
-
V
Forward voltage
V
FM
I
F
= 100 A
-
2.68
3.60
I
F
= 200 A
-
3.41
4.70
I
F
= 100 A, T
J
= 150 °C
-
2.62
2.89
I
F
= 200 A, T
J
= 150 °C
-
3.59
3.89
Reverse leakage current
I
RM
V
R
= V
R
rated
-
10
75
μA
T
J
= 125 °C, V
R
= V
R
rated
-
2
-
mA
T
J
= 150 °C, V
R
= V
R
rated
-
6
15