C&H Technology VS-GT300YH120N - Manual (Page 9)

VS-GT300YH120N
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Vishay Semiconductors
Revision: 25-Jul-13 8 Document Number: 94681
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Fig. 24 - Maximum Thermal Impedance Z
thJC
Characteristics Series Diode
CIRCUIT CONFIGURATION
ORDERING INFORMATION TABLE
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
t
1
- Rectangular Pulse Duration (s)
Z thJC
-
Thermal Impe
d
ance
Junction to Case (°C/W)
11
9
6
7
5
4
1 2 3
1
- Insulated Gate Bipolar Transistor (IGBT)
- Vishay Semiconductors product
2
- T = Trench IGBT technology 3
- Current rating (300 = 300 A) 4
- Y = Current Fed Inverter 5
- Package indicator (Double INT-A-PAK) 6
- Voltage rating (120 = 1200 V) 7
8 - N = Ultrafast
Device code
5 1 3 2 4 6 7 8
G VS- T 300 Y H 120 N