Vishay semiconductors, Diode electrical specifications (t, Thermal and mechanical specifications – C&H Technology VS-GB50NP120N User Manual
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VS-GB50NP120N
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Vishay Semiconductors
Revision: 06-Aug-12
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Document Number: 93418
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Fig. 1 - Typical Output Characteristics
V
GE
= 15 V
Fig. 2 - Typical Transfer Characteristics
V
CE
= 20 V
DIODE ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Diode forward voltage
V
F
I
F
= 50 A
T
J
= 25 °C
-
2.15
-
V
T
J
= 125 °C
-
2.35
-
Diode reverse recovery time
t
rr
I
F
= 50 A, V
R
= 600 V,
dI/dt = - 2100 A/μs,
V
GE
= - 15 V
T
J
= 25 °C
-
90
-
ns
T
J
= 125 °C
-
130
-
Diode peak reverse recovery current
I
RM
T
J
= 25 °C
-
52
-
A
T
J
= 125 °C
-
60
-
Diode reverse recovery energy
E
rec
T
J
= 25 °C
-
1.9
-
mJ
T
J
= 125 °C
-
4.0
-
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Operating junction temperature range
T
J
- 40
-
150
°C
Storage temperature range
T
Stg
- 40
-
125
Junction to case
per ½ module
IGBT
R
thJC
-
-
0.28
K/W
Diode
-
-
0.65
Case to sink
R
thCS
Conductive grease applied
-
0.05
-
Mounting torque
Power terminal screw: M5
2.5 to 5.0
Nm
Mounting screw: M6
3.0 to 6.0
Weight
150
g
I
C
(A)
V
CE
(V)
0
3
1
2
4
0
93418_01
171
57
28.5
114
85.5
142.5
T
J
= 125 °C
T
J
= 25 °C
I
C
(A)
V
GE
(V)
0
2
5
1
3
6
4
8
9
7
11 12
10
13
93418_02
171
85.5
28.5
0
142.5
57
114
T
J
= 125 °C
T
J
= 25 °C