C&H Technology VS-GB50NP120N - Manual (Page 3)

VS-GB50NP120N
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Vishay Semiconductors
Revision: 06-Aug-12 2 Document Number: 93418
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IGBT ELECTRICAL SPECIFICATIONS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
T
J
= 25 °C 1200 - -
V Collector to emitter saturation voltage V
CE(on)
V
GE
= 15 V, I
C
= 50 A, T
J
= 25 °C - 1.70 -
V
GE
= 15 V, I
C
= 50 A, T
J
= 125 °C - 1.95 -
Gate to emitter threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 2 mA, T
J
= 25 °C 5.0 6.2 7.0
Zero gate voltage collector current I
CES
V
CE
= V
CES
, V
GE
= 0 V, T
J
= 25 °C - - 1.0 mA
Gate to emitter leakage current I
GES
V
GE
= V
GES
, V
CE
= 0 V, T
J
= 25 °C - - 400 nA
SWITCHING CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 50 A, R
g
= 18 ,
V
GE
= ± 15 V, T
J
= 25 °C
- 220 -
ns
Rise time t
r
- 60 -
Turn-off delay time t
d(off)
- 420 -
Fall time t
f
- 60 -
Turn-on switching loss E
on
- 2.1 -
mJ
Turn-off switching loss E
off
- 2.6 -
Turn-on delay time t
d(on)
V
CC
= 600 V, I
C
= 50 A, R
g
= 18
,
V
GE
= ± 15 V, T
J
= 125 °C
- 270 -
ns
Rise time t
r
- 60 -
Turn-off delay time t
d(off)
- 500 -
Fall time t
f
- 65 -
Turn-on switching loss E
on
- 4.1 -
mJ
Turn-off switching loss E
off
- 4.7 -
Input capacitance C
ies
V
GE
= 0 V, V
CE
= 25 V, f = 1.0 MHz
- 4.29 -
nF Output capacitance C
oes
- 0.30 -
Reverse transfer capacitance C
res
- 0.20 -
SC data I
SC
t
sc
 10 μs, V
GE
= 15 V, T
J
= 125 °C,
V
CC
= 900 V, V
CEM
 1200 V
- 270 - A
Internal gate resistance R
gint
- 10 - 
Stray inductance L
CE
- - 30 nH
Module lead resistance, terminal to chip R
CC’+EE’
T
C
= 25 °C - 0.75 - m
