Vishay semiconductors – C&H Technology GB75YF120UT User Manual
Page 6
GB75YF120UT
www.vishay.com
Vishay Semiconductors
Revision: 21-Mar-13
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Document Number: 93172
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Fig. 11 - Typical Zero Gate Voltage Collector Current
Fig. 12 - Typical Threshold Voltage
Fig. 13 - Typical Energy Loss vs. I
C
T
J
= 125 °C; L = 500 μH; V
CC
= 600 V, R
g
= 5
; V
GE
= 15 V
Fig. 14 - Typical Switching Time vs. I
C
T
J
= 125 °C; L = 500 μH; V
CC
= 600 V, R
g
= 5
; V
GE
= 15 V
Fig. 15 - Typical Energy Loss vs. R
g
T
J
= 125 °C; L = 500 μH; V
CC
= 600 V, I
C
= 75 A; V
GE
= 15 V
Fig. 16 - Typical Switching Time vs. R
g
T
J
= 125 °C; L = 500 μH; V
CC
= 600 V, I
C
= 75 A; V
GE
= 15 V
400
600
800
1000
1200
0.001
0.01
0.1
1
TJ = 125°C
TJ = 25°C
V
CES
(V)
I
CES
(mA)
0
0.2
0.4
0.6
0.8
1
2
2.5
3
3.5
4
4.5
5
5.5
TJ = 125°C
TJ = 25°C
I
C
(mA)
V
geth
(V)
30
40
50
60
70
80
1000
1500
2000
2500
EON
EOFF
I
C
(A)
Energy (μJ)
20
30
40
50
60
70
80
10
100
1000
tR
tdOFF
tF
tdON
I
C
(A)
Switching Time (ns)
R
G
(
Ω)
Energy (μ
J)
0
10
20
30
40
50
0
2000
4000
6000
8000
10000
12000
14000
EON
EOFF
0
10
20
30
40
50
10
100
1000
10000
tR
tdOFF
tF
tdON
R
G
(
Ω)
Switching Time (ns)