Vishay semiconductors – C&H Technology GB75YF120UT User Manual
Page 5
GB75YF120UT
www.vishay.com
Vishay Semiconductors
Revision: 21-Mar-13
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Document Number: 93172
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Fig. 5 - Typical IGBT Output Characteristics
T
J
= 25 °C; t
p
= 500 μs
Fig. 6 - Typical IGBT Output Characteristics
T
J
= 125 °C; t
p
= 500 μs
Fig. 7 - Typical Diode Forward Characteristics
t
p
= 500 μs
Fig. 8 - Typical V
CE
vs. V
GE
T
J
= 25 °C
Fig. 9 - Typical V
CE
vs. V
GE
T
J
= 125 °C
Fig. 10 - Typical Transfer Characteristics
V
CE
= 20 V; t
p
= 500 μs
0
1
2
3
4
5
6
0
20
40
60
80
100
120
140
160
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 9V
V
CE
(V)
I
CE
(A)
0
1
2
3
4
5
6
7
8
0
20
40
60
80
100
120
140
160
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 9V
V
CE
(V)
I
CE
(A)
0.0
1.0
2.0
3.0
4.0
5.0
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
Tj = 25°C
Tj = 125°C
V
F
(V)
I
F
(A)
7
9
11
13
15
17
19
0
2
4
6
8
10
12
14
16
18
20
ICE = 75A
ICE= 50A
ICE= 25A
V
GE
(V)
V
CE
(V)
7
9
11
13
15
17
19
0
2
4
6
8
10
12
14
16
18
20
ICE = 75A
ICE= 50A
ICE= 25A
V
GE
(V)
V
CE
(V)
5
6
7
8
9
10
11
12
0
50
100
150
200
250
300
TJ = 25°C
TJ = 125°C
V
GE
(V)
I
CE
(A)