Vishay semiconductors – C&H Technology VS-HFA70EA120 User Manual
Page 3
VS-HFA70EA120
www.vishay.com
Vishay Semiconductors
Revision: 20-Jul-12
2
Document Number: 94747
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DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX.
UNITS
Reverse recovery time, per leg
t
rr
I
F
= 1 A; dI
F
/dt = 200 A/μs; V
R
= 30 V
-
48
-
ns
T
J
= 25 °C
I
F
= 50 A
dI
F
/dt = - 200 A/μs
V
R
= 200 V
-
145
-
T
J
= 125 °C
-
218
-
Peak recovery current, per leg
I
RRM
T
J
= 25 °C
-
13
-
A
T
J
= 125 °C
-
19
-
Reverse recovery charge, per leg
Q
rr
T
J
= 25 °C
-
910
-
nC
T
J
= 125 °C
-
1920
-
Junction capacitance, per leg
C
T
V
R
= 1200 V
-
27
-
pF
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX.
UNITS
Junction to case, single leg conducting
R
thJC
-
-
0.35
°C/W
Junction to case, both legs conducting
-
-
0.175
Case to heatsink, per leg
R
thCS
Flat, greased and surface
-
0.05
-
Weight
-
30
-
g
Mounting torque, on terminals and heatsink
T
-
-
1.3
Nm