Hexfred, Ultrafast soft recovery diode, 70 a, Vishay semiconductors – C&H Technology VS-HFA70EA120 User Manual
Page 2
VS-HFA70EA120
www.vishay.com
Vishay Semiconductors
Revision: 20-Jul-12
1
Document Number: 94747
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
HEXFRED
®
Ultrafast Soft Recovery Diode, 70 A
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Antiparallel diodes
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• Designed and qualified for industrial level
• UL approved file E78996
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION/APPLICATIONS
This SOT-227 modules with HEXFRED
®
rectifier are in
antiparallel configuration. The antiparallel configuration is
used for simple series rectifier and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
These modules are intended for general applications such
as HV power supplies, electronic welders, motor control and
inverters.
PRODUCT SUMMARY
V
R
1200 V
V
F
(typical)
2.2 V
t
rr
(typical)
48 ns
I
F(DC)
at T
C
, per module
70 A at 121 °C
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Cathode to anode voltage
V
R
1200
V
Continuous forward current, per leg
I
F
T
C
= 121 °C
35
A
Single pulse forward current
I
FSM
T
J
= 25 °C
350
Maximum power dissipation, per leg
P
D
T
C
= 25 °C
357
W
T
C
= 100 °C
143
RMS isolation voltage
V
ISOL
Any terminal to case, t = 1 minute
2500
V
Operating junction and storage
temperature range
T
J
, T
Stg
- 55 to + 150
°C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS MIN.
TYP.
MAX.
UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100 μA
1200
-
-
V
Forward voltage, per leg
V
FM
I
F
= 30 A
-
2.2
3.0
I
F
= 60 A
-
2.8
4.0
I
F
= 30 A, T
J
= 125 °C
-
2.13
-
I
F
= 60 A, T
J
= 125 °C
-
2.70
-
I
F
= 30 A, T
J
= 150 °C
-
2.04
-
I
F
= 60 A, T
J
= 150 °C
-
2.65
-
Reverse leakage current, per leg
I
RM
V
R
= V
R
rated
-
2.0
75
μA
T
J
= 125 °C, V
R
= V
R
rated
-
1.6
5
mA
T
J
= 150 °C, V
R
= V
R
rated
-
5
10