Vishay semiconductors, Preliminary – C&H Technology VS-GT300TX120U User Manual
Page 6
Preliminary
VS-GT300TX120U
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Vishay Semiconductors
Revision: 19-Jul-13
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Document Number: 93616
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Fig. 11 - Typical IGBT Switching Time vs. I
C
,
T
J
= 125 °C, V
CC
= 600 V, R
g
= 3.3
, V
GE
= 15 V, L = 500 μH
Fig. 12 - Maximum Thermal Impedance Z
thJC
Characteristics (IGBT)
Fig. 13 - Maximum Thermal Impedance Z
thJC
Characteristics (DIODE)
100
1000
10
0 50 100 150 200 250 300 350
t
d(off)
t
d(on)
t
f
t
r
S
witchin
g
Time (ns)
I
C
(A)
0.1
1
0.01
0.001
.
0.00001 0.0001 0.001 0.01 0.1 1 10
t
1
-
Rectangular Pulse Duration (s)
Z
thJC
-
Thermal Impe
d
ance
Junction to Case (°C/W)
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
DC
1
001
0.1
0.001
0.0001
0.00001 0.0001 0.001 0.01 0.1 1 10
t
1
-
Rectangular Pulse Duration (s)
Z
thJC
-
Thermal Impe
d
ance
Junction to Case (°C/W)
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
DC