Vskt320pbf series, Vishay semiconductors, On-state conduction – C&H Technology VSKT320PbF Series User Manual
Page 3: Switching, Blocking
VSKT320PbF Series
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Vishay Semiconductors
Revision: 05-Jul-12
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Document Number: 94085
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ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average on-state current
at case temperature
I
T(AV)
180° conduction, half sine wave
320
A
70
°C
Maximum RMS on-state current
I
T(RMS)
As AC switch
710
A
Maximum peak, one-cycle on-state
non-repetitive, surge current
I
TSM
t = 10 ms
No voltage
reapplied
Sinusoidal
half wave,
initial T
J
=
T
J
maximum
9000
t = 8.3 ms
9420
t = 10 ms
100 % V
RRM
reapplied
7570
t = 8.3 ms
7920
Maximum I
2
t for fusing
I
2
t
t = 10 ms
No voltage
reapplied
405
kA
2
s
t = 8.3 ms
370
t = 10 ms
100 % V
RRM
reapplied
287
t = 8.3 ms
262
Maximum I
2
t for fusing
I
2
t
t = 0.1 ms to 10 ms, no voltage reapplied
4050
kA
2
s
Low level value or threshold voltage
V
T(TO)1
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
),
T
J
= T
J
maximum
0.80
V
High level value of threshold voltage
V
T(TO)2
(I >
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
1.03
Low level value on-state slope resistance
r
t1
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
),
T
J
= T
J
maximum
0.75
m
High level value on-state slope
resistance
r
t2
(I
>
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
0.53
Maximum peak on-state or
forward voltage drop
V
TM
, V
FM
I
TM
= 750 A, T
J
= T
J
maximum, 180° conduction,
average power = V
T(TO)
x I
T(AV)
+ r
f
x (I
T(RMS)
)
2
1.37
V
I
TM
= 750 A, T
J
= 25 °C, 180° conduction,
average power = V
T(TO)
x I
T(AV)
+ r
t
x (I
T(RMS)
)
2
1.40
Maximum holding current
I
H
Anode supply = 12 V, initial I
T
= 30 A, T
J
= 25 °C
500
mA
Maximum latching current
I
L
Anode supply = 12 V, resistive load = 1
,
gate pulse: 10 V, 100 μs, T
J
= 25 °C
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Typical delay time
t
d
T
J
= 25 °C, gate current = 1 A dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
1.0
μs
Typical rise time
t
r
2.0
Typical turn-off time range
t
q
I
TM
= 300 A; dI/dt = 15 A/μs; T
J
= T
J
maximum;
V
R
= 50 V; dV/dt = 20 V/μs; gate 0 V, 100
200 to 350
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak reverse and
off-state leakage current
I
RRM,
I
DRM
T
J
= T
J
maximum
50
mA
RMS insulation voltage
V
INS
50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s
3600
V
Critical rate of rise of off-state voltage
dV/dt
T
J
= T
J
maximum, exponential to 67 % rated V
DRM
1000
V/μs