C&H Technology VS-GB100NH120N - Manual (Page 6)

VS-GB100NH120N
www.vishay.com
Vishay Semiconductors
Revision: 16-Jan-13 5 Document Number: 94755
For technical questions within your region: [email protected] , [email protected] , [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Diode Switching Loss vs. Gate Resistance
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
E
(mJ)
R
g
( Ω)
0 10 20 30 40 50 60
8
7
6
5
4
3
2
1
0
E
rec
V
CC
= 600 V
I
C
= 100 A
V
GE
= - 15 V
T
J
= 125 °C
0.001
0.01
0.1
0.001 0.01 0.1 1 10
t (s)
Z
thJC
(K/W)
Diode
1 3 2
5
4
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95525