C&H Technology VS-GB100NH120N - Manual (Page 5)

VS-GB100NH120N
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Vishay Semiconductors
Revision: 16-Jan-13 4 Document Number: 94755
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Fig. 5 - RBSOA
Fig. 6 - IGBT Transient Thermal Impedance
Fig. 7 - Typical Forward Characteristics Fig. 8 - Diode Switching Loss vs. I
F
0 300 900 600 1200 1500
200
220
180
160
140
120
100
80
60
40
20
0
I C
(A)
V
CE
(V)
R
g
= 5.6 Ω
V
GE
= ± 15 V
T
J
= 125 °C
I
C
, module
0.001
0.01
0.1
0.001 0.01 0.1 1 10
t (s)
Z
thJC
(K/W)
IGBT
100
25
0
50
150
175
200
125
75
0 0.5 1 1.5 2 2.5 3
V
F
(V)
I F
(A)
125 °C
25 °C
0 50 100 150 200
10
9
8
7
6
5
4
3
2
1
0
I
F
(A)
E
(mJ)
E
rec
V
CC
= 600 V
R
g
= 5.6 Ω
V
GE
= - 15 V
T
J
= 125 °C