C&H Technology VS230DM16CCB - Manual (Page 2)

Document Number: 93833 For technical questions, contact: [email protected] www.vishay.com
Revision: 31-Mar-08 1
Standard Recovery Diodes
VS230DM16CCB
Vishay High Power Products
FEATURES
• 100 % tested at probe
• Bondable top metal
• Wafer in box, and die in chip carrier
Notes
(1) Nitrogen flow on die edge
(2) Wafer and die probe test clamped at 1200 V to limit arcing. 1600 V BV testable only in encapsulated packages
PRODUCT SUMMARY
Junction size Square 230 mils
Wafer size 4"
V
RRM
class 1600 V
Passivation process Glassivated MOAT
Reference Vishay HPP
packaged part
40EPS Series
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage V
FM
T
J
= 25 °C, I
F
= 20 A 1.05
V
T
J
= 25 °C, I
F
= 40 A 1.20
Maximum repetitive reverse voltage V
RRM
(1) T
J
= 25 °C, I
RRM
= 100 µA 1600 (2) V
MECHANICAL DATA
Nominal back metal composition (thickness) Cr-Ni-Ag (1 kÅ - 4 kÅ - 6 kÅ)
Nominal front metal composition (thickness) 100 % Al (20 µm)
Chip dimensions 230 x 230 mils - see dimensions (link at the end of datasheet)
Wafer diameter 100 mm, with standard < 110 > flat
Wafer thickness 330 µm ± 10 µm
Maximum width of sawing line 45 µm
Reject ink dot size Ø 0.25 mm minimum
Ink dot location See dimensions (link at the end of datasheet)
Recommended storage environment Storage in original container, in desiccated nitrogen, with no contamination